Farnell has announced a new global distribution partnership with Transphorm, a specialist in the design and manufacturing of ...

Technical Paper Research Organizations NeRTCAM: CAM-Based CMOS Implementation of Reference Frames for Neuromorphic Processors Carnegie Mellon University Using Formal Verification to Evaluate Single ...

July 20, 1928 – July 24, 2006 Algan R. Miller of West Sacramento died at Mercy Hospital in Sacramento on Monday, July 24 at age 78. Mr. Miller was born July 20, 1928 in Hoven, S.D. to Gottifried ...

More information: John Niroula et al, High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500°C, Applied Physics Letters (2024). DOI: 10.1063/5.0191297 ...

Zhang, H, Zheng, X, Lin, D, Hong, Y, Zhou, J, Lv, L, Cao, Y, Han, H, Zhang, W, Zhang, J, Ma, X and Hao, Y Study on the ...

Reference: Niroula J, Xie Q, Rajput NS, et al. High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C. Applied Physics Letters. 2024;124(20):202103.

Thus, devices integrating electron beams and using AlGaN quantum boxes as the active material have seen significant advancements for enhanced efficiency and power. These quantum boxes boost ...

The example below highlights ALE of AlGaN etching with Cl 2 /Ar. Step 1) Dosing of the substrate with an etching gas, which adsorbs on and reacts with the etch material. The etch gas is frequently ...

INSEAD Professor Alexandra Roulet has been named the 2024 Best Young French Economist by the Cercle des économistes and Le ...

Moreover, an optimal money injection does not avoid the economy being at the ZLB. Algan, Y., and X. Ragot (2010): “Monetary Policy with Heterogeneous Agents and Borrowing Constraints,” Review of ...

Bolognesi, C.R. Kwan, A.C. and DiSanto, D.W. 2002. Transistor delay analysis and effective channel velocity extraction in AlGaN/GaN HFETs. p. 685.

In this work, we have proposed a concept for an epitaxial integration and then demonstrated a completely different method that allows us to achieve an epitaxial integration of a single μLED with a ...