To address these issues, the researchers introduce a sandwich-like Si-doping scheme and optimise doping levels and relative ...
To address these issues, the researchers introduce a sandwich-like Si-doping scheme and optimise doping levels and relative ...
Thus, devices integrating electron beams and using AlGaN quantum boxes as the active material have seen significant advancements for enhanced efficiency and power. These quantum boxes boost ...
Strain management is the key to achieving high-quality aluminum gallium nitride (AlGaN) materials for fabricating AlGaN-based ultraviolet-B (UV-B) light-emitting diodes (LEDs). In this work, a kinetic ...
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State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China ...
Two-terminal devices are electronic components connected to electrical circuits via two electrical terminals. Although these ...
First Period_1, Carolina, Kuznetsov 1 (Necas, Skjei), 1:35 (pp). 2, N.Y. Islanders, MacLean 1 (Lee, Romanov), 8:20. Second Period_None. Third Period_3, Carolina ...